Join the Future of Microelectronics: Internship Opportunity Embark on a cutting-edge research journey exploring the forefront of microelectronics! We are seeking highly motivated and talented interns to join our team at the National Tsing Hua University's College of Semiconductor Research. This internship offers a unique opportunity to contribute to groundbreaking research on Ferroelectric Field Effect Transistors (FeFETs), a promising technology for next-generation memory devices.  

Project Focus: Investigate the correlation between ferroelectric polarization and charge trapping in Hafnium-Oxide-Based FeFETs using advanced techniques like low-frequency noise analysis and charge pumping.  

Responsibilities:
Assist in the fabrication and characterization of FeFET devices. 
Support experiments involving electrical testing, low-frequency noise measurements, and charge pumping analysis.  
Analyze data and contribute to the understanding of FeFET device physics.  

Qualifications: Currently pursuing a Bachelor's or Master's degree in Electrical Engineering, Materials Science, Physics, or a related field. Strong interest in semiconductor devices, microelectronics, and nanotechnology. Excellent analytical, problem-solving, and communication skills.

Benefits:
Gain hands-on experience in a state-of-the-art research environment.
Work alongside leading experts in the field of ferroelectric memory.
Contribute to high-impact research with potential for publication.
Develop valuable skills in device fabrication, characterization, and data analysis.

To apply, please submit your resume and a brief cover letter outlining your research interests and relevant coursework to deepanshi@gapp.nthu.edu.tw Join us in shaping the future of memory technology!