The primary objective of this project is to pioneer the development of novel optoelectronics and high-speed microelectronic devices including light emitting transistors (LETs), transistor lasers (TLs), distributed feedback lasers, vertical cavity lasers, micro light emitting diodes (u-led), InGaN/GaN heterojunction bipolar transistors, and GaN based high electron mobility transistors (GaN-HEMT).

Throughout the duration of this project, participants will develop a comprehensive set of research skills. Including but not excluding theoretical analysis, circuit simulation, and device measurement. These capabilities are critical for conducting an engineering-based research project, both in the planning phase and the executional phase of the entire experiment. In addition, this project provides the most precious opportunity for participants to gain insights towards how the factors in semiconductor manufacturing process influences the device characteristics as an outcome.

Applicants are required to have basic electrical engineering background, or any electrical/optical related physics knowledge to be actively participating in experiments.

Working proficiency of English is required, with Mandarin Chinese as a great addition but not necessary.