This project is conducted at the Compound Semiconductor Device Laboratory at National Yang Ming Chiao Tung University, under the supervision of Prof. Edward Yi Chang. The research focuses on advanced compound semiconductor devices, including GaN-based high-frequency and high-power electronics for applications such as 5G communications, power electronics, and next-generation integrated systems.

Students participating in this program will be involved in research activities such as semiconductor device fabrication, electrical characterization, and simulation. Participants may work on topics including GaN HEMT devices, III-V semiconductor technologies, and related device physics. Through this program, students will gain hands-on research experience and collaborate with faculty members, postdoctoral researchers, and graduate students in an international research environment.

The program is expected to run between June and September 2026. Each participant is encouraged to stay for at least 4 to 8 weeks, with a minimum recommended duration of 2 months.

Selected students will receive a monthly stipend to support living expenses. Accommodation may be provided depending on availability. Participants are responsible for their own travel arrangements unless otherwise specified.

Applicants should have a background in electrical engineering, materials science, physics, or related fields. Prior experience in semiconductor devices, laboratory work, or programming (e.g., Python) is preferred but not required. Good English communication skills are expected.

Applications are accepted on a rolling basis until positions are filled. Applicants are advised to apply early.