Research Internship in TCAD Simulation of Oxide Semiconductor-Based Thin-Film Transistors and TSV Design for Low Capacitance and Stress This internship program offers students an opportunity to learn about Taiwan’s higher education system and its rich culture. Taiwan is recognized as one of the safest and most stable countries in the world, with a highly advanced semiconductor industry at the forefront of cutting-edge technology. This program will help students explore the possibility of pursuing higher education in Taiwan while gaining valuable hands-on research experience. This internship will recruit students for two research projects: a) TCAD Simulation of Oxide Semiconductor-Based Thin-Film Transistors (TFTs) b) TSV Design for Low Capacitance and Stress Participation Requirements a) Master’s or undergraduate students in Electrical Engineering, Electronics Engineering, Materials Science, Applied Physics, Optoelectronics, or related fields b) Experience with TCAD software or tools such as Ansys HFSS, Ansys Thermal, or mechanical simulation tools c) Basic knowledge of semiconductor device physics d) Good proficiency in English (Mandarin is an added advantage) Duration 3 to 6 months (minimum duration: 2 months) Scholarship / Support Students will receive up to 15,000 NTD per month under this program. Internship Program Fee Participants are required to pay a program fee based on their duration of stay at National Taiwan University (NTU). TEEP students will receive a 50% discount on the program fees. The discounted fee structure is as follows: Duration (1–31 days): NTD 5,000 Duration (32–62 days): NTD 7,500 Duration (63–92 days): NTD 10,000 Duration (93–180 days): NTD 15,000 Additional Benefits Students who demonstrate strong performance during the internship may receive career guidance and support for pursuing higher education opportunities in Taiwan. For more information regarding this internship, please contact: Dr. Mukul Kumar Email: mukulkumar.research@gmail.com